Yamaguchi University

Sharp Kabushiki Kaisha Corporation

Narihito Okada

Kazuyuki Tadatomo

Haruhisa Takiguchi

Hiroyuki Kashihara

A nitride semiconductor light-emitting device is formed of an n-type nitride semiconductor layer, a trigger layer, a V-pit expanding layer, a light-emitting layer, and a p-type nitride semiconductor layer provided in this order. The light-emitting layer has a V-pit formed therein. The trigger layer is made of a nitride semiconductor material having a lattice constant different from that of a material that forms an upper surface of the n-type nitride semiconductor layer. The V-pit expanding layer is made of a nitride semiconductor material having a lattice constant substantially identical to that of the material that forms the upper surface of the n-type nitride semiconductor layer, and the V-pit expanding layer has a thickness of 5 nm or more and 5000 nm or less.

Nitride semiconductor light-emitting device and method of manufacturing the same

In a semiconductor device fabricated by growing a compound semiconductor layer on a sapphire substrate, a sapphire substrate enabling the semiconductor device to have a high light-extraction efficiency is provided. A plurality of projections, . . . are provided at random on a surface of a sapphire substrate, and a GaN layeris grown on this surface. Then, a multi-quantum well layer, a p-AlGaN layer, a p-GaN layer, and an ITO layerare formed on the GaN layer, and two electrodesandare also formed. In this manner, a semiconductor light-emitting device is fabricated.

Growing community of inventors

Ube, Japan

Narihito Okada