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Yokohama, Japan

Haruhisa Mori

USPTO Granted Patents = 11

Average Co-Inventor Count = 2.2

ph-index = 8

Forward Citations = 183(Granted Patents)

Location History:

Yokohama, JP (1981 - 1989)
Kawasaki, JP (1998)

Company Filing History:

11 out of 39,244

Fujitsu Corporation

1 out of 10,341

Tokyo Electron Limited

where one patent can have more than one assignee

Years Active: 1981-1998

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5795494 - Semiconductor substrate cleaning method and semiconductor device (1998-08-18),

2. 4889820 - Method of producing a semiconductor device (1989-12-26),

3. 4806769 - Disk exchangeable target mechanism with effective cooling means, for ion (1989-02-21),

4. 4803884 - Method for measuring lattice defects in semiconductor (1989-02-14),

5. 4788473 - Plasma generating device with stepped waveguide transition (1988-11-29),

6. 4785188 - Primary particle beam irradiation apparatus and method of irradiation (1988-11-15),

7. 4500365 - Laser treating implanted semiconductor surface through photo-resist layer (1985-02-19),

8. 4410801 - Ion implantation equipment (1983-10-18),

9. 4381202 - Selective epitaxy by beam energy and devices thereon (1983-04-26),

10. 4375993 - Method of producing a semiconductor device by simultaneous multiple (1983-03-08),

11. 4258077 - Method of ion implantation into a semiconductor substrate provided with (1981-03-24),

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