The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 1981
Filed:
Oct. 26, 1979
Applicant:
Inventors:
Haruhisa Mori, Yokohama, JP;
Motoo Nakano, Yokohama, JP;
Assignee:
Fujitsu Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
427 38 ; 148-15 ; 2504 / ; 2504 / ; 357 23 ; 357 24 ; 357 91 ; 427 82 ;
Abstract
In the production of a semiconductor device, such as an IC including MOS transistors, impurity ions are implanted into the semiconductor substrate of the device provided with an insulating film. The insulating film is electrically charged by the impurity ions and may be destroyed due to an electric potential between the insulating film and the semiconductor substrate. A novel process provided by the invention prevents the destruction of the insulating film and shortens the ion implantation time, since the beam current of the impurity ions is successively increased until the required dosing amount is obtained.