The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 1989
Filed:
Mar. 09, 1989
Haruhisa Mori, Yokohama, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of producing a semiconductor device comprises the steps of: preparing a semiconductor substrate, forming a gate insulating layer on the semiconductor substrate, forming a gate electrode on the gate insulating layer, forming a source/drain region in the semiconductor substrate, forming an insulating cover layer on the entire exposed surface, forming a mask on the insulating cover layer having an opening over the gate electrode, implanting one conductivity type impurity ions into the semiconductor substrate through the insulating cover layer, the gate electrode and the gate insulating layer as a first ion implanting process, implanting opposite conductivity type impurity ions into the semiconductor substrate therethrough as a second implanting process, at an implanting angle larger than that used in the first ion implanting process with respect to the normal plane of the semiconductor substrate and to substantially the same depth as the first ion implanting process, and at a dosage smaller than that in the first ion implanting process, whereby the one conductivity type impurity ions at laterally spread portions are compensated.