Fujitsu Corporation

Tokyo Electron Limited

Haruhisa Mori

Motoo Nakano

Tsutomu Ogawa

Takashi Matsumoto

Nobuo Sasaki

Shuzo Fujimura

Kunihiko Wada

Yoshinobu Ono

Junji Sakurai

Hajime Kamioka

Yuka Hayami

Shuji Kikuchi

Hiroshi Kaneta

Tadayuki Kojima

Miki T Suzuki

Hiroki Ogawa

Takashi Igarashi

Yoshiko Okui

Masanao Hotta

Hiroshi Ohmori

Satoshi Hasui

Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.

Semiconductor substrate cleaning method and semiconductor device

A method of producing a semiconductor device comprises the steps of: preparing a semiconductor substrate, forming a gate insulating layer on the semiconductor substrate, forming a gate electrode on the gate insulating layer, forming a source/drain region in the semiconductor substrate, forming an insulating cover layer on the entire exposed surface, forming a mask on the insulating cover layer having an opening over the gate electrode, implanting one conductivity type impurity ions into the semiconductor substrate through the insulating cover layer, the gate electrode and the gate insulating layer as a first ion implanting process, implanting opposite conductivity type impurity ions into the semiconductor substrate therethrough as a second implanting process, at an implanting angle larger than that used in the first ion implanting process with respect to the normal plane of the semiconductor substrate and to substantially the same depth as the first ion implanting process, and at a dosage smaller than that in the first ion implanting process, whereby the one conductivity type impurity ions at laterally spread portions are compensated.

Method of producing a semiconductor device

An improved disk exchangeable target mechanism for an ion implantation system includes an effective cooling means for preventing thermal damage to a resist and for improving an implantation quality of semiconductor wafers. The target mechanism includes a metal disk on which a semiconductor wafer(s) to be ion-implanted are mounted on a first face thereof, a support including a metal base having the target disk mounted thereon, and a shaft incorporated with the base, and a medium, provided between a second face of the target disk opposite to the first face and the base, for thermally contact therebetween. Preferably, the base of the support is provided with a cavity and the shaft is provided with holes communicating with the cavity, whereby a cooling medium is inserted into the cavity through one hole and is drained from the cavity through another hole. Furthermore, preferably, the target disk is provided with a thermal transportation unit, such as heat pipes, for transporting thermal energy from a portion(s) at which a high temperature is caused by ion implantation energy, to another portion(s) at which the temperature is low.

Disk exchangeable target mechanism with effective cooling means, for ion

A method for measuring lattice defects in semiconductor such as a silicon crystal, detects an ultrasonic velocity of an ultrasonic pulse propagating through the semiconductor to which heat is variably applied. An elastic constant of the semiconductor is calculated from the ultrasonic velocity, and a concentration or density of lattice defects of the semiconductor is obtained by converting the elastic constant.

Method for measuring lattice defects in semiconductor

A plasma generating device comprises: a rectangular wave guide for transmitting microwaves, wherein the width of the plasma generating device is decreased in the direction of an electrical field of the microwaves; a plasma generating chamber wherein plasma is generated by absorbing, in a gas, microwave energy transmitted by the rectangular wave guide, and a part of the plasma generating chamber has a rectangular cross-section taken along the plane perpendicular to the microwave propagation direction. A magnetic field generating device is provided having the same axial direction as the direction of propagation of the microwaves and applies a magnetic field having an Electron Cyclotron Resonance intensity to the plasma generating chamber. The magnetic field generating device is provided at least one location outside of the direction of the microwave electrical field direction, and a dielectric window is provided between the rectangular wave guide and the plasma generating chamber to realize a vacuum seal of the plasma generating chamber.

Plasma generating device with stepped waveguide transition

A primary particle beam irradiation apparatus comprising a stage on which a target is placed; a device for irradiating a predetermined scan region on the stage with a primary particle beam; a secondary ion sensor for detecting a secondary ion, generated by an irradiation of the primary particle beam, from the stage or the target; and a device, connected to the irradiating device and the secondary ion sensor, for controlling the irradiating means on the basis of an output signal from the secondary ion sensor. Further, a method for irradation of a primary particle beam comprising the step of detecting the irradiation position of a primary particle beam scanned on a target over a predetermined width or predetermined region by using the output of a secondary ion sensor provided near the surface of the target; the step of correcting the deviation of the irradiation position based on the information of the irradiation position which is detected, and further scanning the primary particle beam to irradiate the surface of the target based on the information obtained at the correction step.

Primary particle beam irradiation apparatus and method of irradiation

A method of manufacturing a semiconductor device wherein a surface region of a semiconductor substrate is selectively heated by irradiation of a laser beam of a wavelength .lambda.. The method includes the steps of opening a window through an insulating layer formed on the surface of the semiconductor substrate, coating on the entire surface of the substrate a light transmitting film having an index n of refraction in such a manner that the thickness of the film over the exposed window part is equal, or substantially equal, to the value of .lambda./4n or .lambda./4n times an odd number, and then carrying out the irradiation of the laser beam. A photo-resist, thermally grown silicon dioxide film, silicon dioxide film by chemical vapor deposition, CVD phosphosilicate glass, or a glass film formed by coating hydroxide of silicon or its high molecule polymer is employed as the light transmitting film.

Laser treating implanted semiconductor surface through photo-resist layer

An equipment for implanting impurity material ions into a semiconductor wafer which supplies acceleration voltage and which continuously and automatically changes the acceleration voltage within a predetermined range for the purpose of producing impurity layers having a uniform concentration distribution in the direction of the depth of wafer. The equipment is effective in making fine patterns of integrated circuits. In one embodiment, the equipment changes the acceleration voltage continuously so that the frequency of the acceleration voltage is high enough to form a pillar shaped impurity layer at positions in a wafer while the ion beam is irradiated onto the positions respectively thereby to form an impurity layer having a uniform impurity distribution profile. In another embodiment of the invention, the equipment changes the acceleration voltage continuously but slow enough with respect to the scan frequency so that the ions are implanted to reach a certain depth in the first scan, another depth in the second scan and so on.

Ion implantation equipment

A semiconductor device in which an insulating layer having a window is formed on a semiconductor substrate, a semiconductor layer is formed on the insulating layer and a semiconductor element is formed on the semiconductor layer, has the advantages of high-speed operation and low power consumption. A conventional manufacturing method involves a high-temperature, time-consuming step by which the semiconductor layer for forming thereon the semiconductor element is formed so that it may have a proper impurity concentration. In the present invention, however, a portion of the semiconductor layer and a portion of the underlying substrate are rendered molten by annealing with an energy beam as of a laser, by which an impurity contained in the substrate is diffused into the semiconductor layer. Accordingly, no high-temperature, time-consuming step is involved in the present invention, permitting the production of a semiconductor device of excellent characteristics.

Selective epitaxy by beam energy and devices thereon

A method of producing a semiconductor device which comprises steps of forming an insulator layer on a semiconductor substrate, forming a semiconductor layer on the insulator layer and then annealing the semiconductor layer by means of a first laser with a second laser being applied to the insulator layer to heat it while the first layer is applied to the semiconductor laser.

Method of producing a semiconductor device by simultaneous multiple

In the production of a semiconductor device, such as an IC including MOS transistors, impurity ions are implanted into the semiconductor substrate of the device provided with an insulating film. The insulating film is electrically charged by the impurity ions and may be destroyed due to an electric potential between the insulating film and the semiconductor substrate. A novel process provided by the invention prevents the destruction of the insulating film and shortens the ion implantation time, since the beam current of the impurity ions is successively increased until the required dosing amount is obtained.

Growing community of inventors

Yokohama, Japan

Haruhisa Mori