This inventor holds 4 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Ibaraki University, Jx Advanced Metals Corporation, Jx Metals Corporation. Active years: 2015-2025.
Company Filing History:
4 out of 14 
1 out of 37 
1 out of 41 
Years Active: 2015-2025
Title: Haruhiko Udono: Innovator in Semiconductor Materials
Introduction
Haruhiko Udono is a notable inventor based in Hitachi, Japan. He has made significant contributions to the field of semiconductor materials, holding a total of 4 patents. His work focuses on improving the properties of single crystal materials, which are essential for various technological applications.
Latest Patents
Udono's latest patents include innovations such as the MgSi single crystal and the MgSi single crystal substrate. He has also developed an infrared light receiving element and a method for producing MgSi single crystal. His MgSi single crystal is designed to suppress the generation of low-angle grain boundaries, ensuring high-quality crystal formation. Additionally, he has created a semiconductor material with improved oxidation resistance, represented by the composition formula MgSn·Zn, where the Zn content ranges from 0.05 to 1 at % relative to MgSn.
Career Highlights
Throughout his career, Haruhiko Udono has worked with esteemed institutions such as Ibaraki University and JX Metals Corporation. His research and development efforts have significantly advanced the understanding and application of semiconductor materials.
Collaborations
Some of his notable coworkers include Toshiaki Asahi and Yohiko Mito. Their collaborative efforts have contributed to the success of various projects in the semiconductor field.
Conclusion
Haruhiko Udono's innovative work in semiconductor materials has led to advancements that are crucial for modern technology. His patents reflect a commitment to enhancing the quality and performance of single crystal materials.