The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Mar. 16, 2011
Haruhiko Udono, Hitachi, JP;
Yohiko Mito, Tokyo, JP;
Haruhiko Udono, Hitachi, JP;
Yohiko Mito, Tokyo, JP;
IBARAKI UNIVERSITY, Ibaraki, JP;
SHOWA KDE CO., LTD., Tokyo, JP;
Abstract
Provided are an apparatus and a method for producing an inexpensive MgSiSnpolycrystal that can be effectively used as thermoelectric conversion materials that can be expected to have a high performance index by doping if necessary. A problem can be solved by a production apparatusfor producing an MgSiSnpolycrystal including at least a reaction vessel for synthesis of MgSiSnrepresented by the following formula (1) by filling a mixture of Mg particles and Si particles or Mg particles and Sn particles, or Mg—Si alloy particles or Mg—Sn alloy particles as a main starting materialto cause a reaction; an inorganic fiber layerwhich is fixedly provided above the starting materialfilled into the reaction vesseland has air permeability, which can be caused to disappear by a productgenerated by chemical reaction of vaporized Mg with oxygen during the synthesis of the polycrystal; heating meansfor heating the reaction vessel; and control meansfor controlling the heating temperature and heating time of the reaction vessel, whereinMgSiSn  (1)