Ibaraki University

Jx Nippon Mining Metals Corporation

Jx Metals Corporation

Jx Advanced Metals Corporation

Showa Kde Co., Ltd.

Haruhiko Udono

Toshiaki Asahi

Yohiko Mito

Provided is a MgSi single crystal in which generation of low-angle grain boundaries in the crystal is satisfactorily suppressed. A MgSi single crystal, wherein a variation in crystal orientation as measured by XRD is in a range of ±0.020°.

MgSi single crystal, MgSi single crystal substrate, infrared light receiving element and method for producing MgSi single crystal

Provided is a semiconductor material having improved oxidation resistance. The semiconductor material has a single crystal represented by the following composition formula:MgSn·Zn  Composition formula:in which, a is a Zn content of from 0.05 to 1 at % relative to MgSn.

Semiconductor material, infrared light receiving element and method for producing semiconductor material

Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a MgSi material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.

Photodiode and photosensitive device

Provided are an apparatus and a method for producing an inexpensive MgSiSnpolycrystal that can be effectively used as thermoelectric conversion materials that can be expected to have a high performance index by doping if necessary. A problem can be solved by a production apparatusfor producing an MgSiSnpolycrystal including at least a reaction vessel for synthesis of MgSiSnrepresented by the following formula (1) by filling a mixture of Mg particles and Si particles or Mg particles and Sn particles, or Mg&#x2014;Si alloy particles or Mg&#x2014;Sn alloy particles as a main starting materialto cause a reaction; an inorganic fiber layerwhich is fixedly provided above the starting materialfilled into the reaction vesseland has air permeability, which can be caused to disappear by a productgenerated by chemical reaction of vaporized Mg with oxygen during the synthesis of the polycrystal; heating meansfor heating the reaction vessel; and control meansfor controlling the heating temperature and heating time of the reaction vessel, whereinMgSiSn&#x2003;&#x2003;(1)

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Hitachi, Japan

Haruhiko Udono