The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 2021
Filed:
Sep. 20, 2018
Ibaraki University, Mito, JP;
Jx Nippon Mining & Metals Corporation, Tokyo, JP;
Haruhiko Udono, Hitachi, JP;
Toshiaki Asahi, Tokyo, JP;
IBARAKI UNIVERSITY, Mito, JP;
JX NIPPON MINING & METALS CORPORATION, Tokyo, JP;
Abstract
Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a MgSi material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.