logo

For the Inventor, By the Inventor

Dresden, Germany

Hans-Jürgen Thees

This inventor holds 6 USPTO granted patents and 7 published patent applications. Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2014-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans-Jürgen Thees. Retrieved from https://idiyas.com/inventor/hans-jurgen-thees

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 66.7

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 17(Granted Patents)


Company Filing History:

goldMedal5 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal1 out of 1,092 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2014-2022

Loading Chart...
6 patents (USPTO):Explore Patents
1. 11217678 - Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI (2022-01-04),
2. 10522655 - Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI (2019-12-31),
3. 10418364 - Semiconductor device structure with self-aligned capacitor device (2019-09-17),
4. 9806170 - Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI (2017-10-31),
5. 9324868 - Epitaxial growth of silicon for FinFETS with non-rectangular cross-sections (2016-04-26),
6. 8906801 - Processes for forming integrated circuits and integrated circuits formed thereby (2014-12-09),

Title: Innovations of Hans-Jürgen Thees in Semiconductor Technology

Introduction

Hans-Jürgen Thees is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced spacer integration techniques. With a total of five patents to his name, his work has had a profound impact on the industry.

Latest Patents

Hans-Jürgen Thees's latest patents include innovative methods for differential SG/EG spacer integration with equivalent NFET/PFET spacer widths. His work on dual raised source drain epitaxial silicon and triple-nitride spacer integration enables high-voltage EG devices on FDSOI. The methods he developed involve forming matched PFET/NFET spacers with differential widths for SG and EG structures. Additionally, he has provided methods for forming differential width nitride spacers for SG NFET and SG PFET structures, as well as PFET/NFET EG structures. These advancements include several steps, such as forming nitride layers, oxide liners, and RSD structures, which enhance the performance of semiconductor devices.

Career Highlights

Throughout his career, Hans-Jürgen Thees has worked with prominent companies in the semiconductor industry, including GlobalFoundries Inc. and GlobalFoundries U.S. Inc. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking innovations in semiconductor technology.

Collaborations

Hans-Jürgen Thees has collaborated with notable professionals in his field, including Peter Baars and George Robert Mulfinger. These collaborations have further enriched his work and led to advancements in semiconductor technologies.

Conclusion

Hans-Jürgen Thees is a distinguished inventor whose contributions to semiconductor technology have paved the way for innovative advancements. His patents and collaborations reflect his commitment to enhancing the performance and capabilities of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…