Company Filing History:
Years Active: 2014-2022
Title: Innovations of Hans-Jürgen Thees in Semiconductor Technology
Introduction
Hans-Jürgen Thees is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced spacer integration techniques. With a total of five patents to his name, his work has had a profound impact on the industry.
Latest Patents
Hans-Jürgen Thees's latest patents include innovative methods for differential SG/EG spacer integration with equivalent NFET/PFET spacer widths. His work on dual raised source drain epitaxial silicon and triple-nitride spacer integration enables high-voltage EG devices on FDSOI. The methods he developed involve forming matched PFET/NFET spacers with differential widths for SG and EG structures. Additionally, he has provided methods for forming differential width nitride spacers for SG NFET and SG PFET structures, as well as PFET/NFET EG structures. These advancements include several steps, such as forming nitride layers, oxide liners, and RSD structures, which enhance the performance of semiconductor devices.
Career Highlights
Throughout his career, Hans-Jürgen Thees has worked with prominent companies in the semiconductor industry, including GlobalFoundries Inc. and GlobalFoundries U.S. Inc. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking innovations in semiconductor technology.
Collaborations
Hans-Jürgen Thees has collaborated with notable professionals in his field, including Peter Baars and George Robert Mulfinger. These collaborations have further enriched his work and led to advancements in semiconductor technologies.
Conclusion
Hans-Jürgen Thees is a distinguished inventor whose contributions to semiconductor technology have paved the way for innovative advancements. His patents and collaborations reflect his commitment to enhancing the performance and capabilities of semiconductor devices.
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