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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10418364 B1

PDFFull Text
Date of Patent:
Sep. 17, 2019

Filed:

Aug. 31, 2016

Semiconductor device structure with self-aligned capacitor device

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Peter Baars, Dresden, DE;

Hans-Jürgen Thees, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:

Amerson Law Firm, PLLC

Primary Examiner:

Abul Kalam

Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/285 (2006.01); H01L 21/762 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10811 (2013.01); H01L 21/28518 (2013.01); H01L 21/76283 (2013.01); H01L 21/76897 (2013.01); H01L 21/84 (2013.01); H01L 23/485 (2013.01); H01L 27/10873 (2013.01); H01L 27/1203 (2013.01); H01L 28/82 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/45 (2013.01); H01L 29/66545 (2013.01); H01L 29/66651 (2013.01); H01L 29/7838 (2013.01); H01L 29/7848 (2013.01); H01L 27/0629 (2013.01); H01L 27/1085 (2013.01);
Abstract

A semiconductor device structure is disclosed including a semiconductor-on-insulator (SOI) substrate, the SOI substrate comprising a semiconductor layer, a substrate material and a buried insulating material layer positioned between the semiconductor layer and the substrate material, a trench isolation structure positioned in at least a portion of the SOI substrate, the trench isolation structure defining a first region in the SOI substrate, and a capacitor device formed in the first region, the capacitor device comprising a first electrode formed by a conductive layer portion formed in the first region on the buried insulating material layer, the conductive layer portion at least partially replacing the semiconductor layer in the first region, a second electrode formed over the first electrode, and an insulating material formed between the first electrode and the second electrode.

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