Company Filing History:

12 out of 1,723

Semiconductor Manufacturing International (shanghai) Corporation

patents

1 out of 934

Semiconductor Manufacturing International (beijing) Corporation

patents

1 out of 77

Semiconductor Manufacturing International Corp.

where one patent can have more than one assignee

Years Active: 2008-2019

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14 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10515892 - TSV interconnect structure and manufacturing method thereof (2019-12-24),

2. 10128117 - Semiconductor device, related manufacturing method, and related electronic device (2018-11-13),

3. 9799525 - Semiconductor device, related manufacturing method, and related electronic device (2017-10-24),

4. 9590031 - Fin-type field effect transistor and manufacturing method thereof (2017-03-07),

5. 9349588 - Method for fabricating quasi-SOI source/drain field effect transistor device (2016-05-24),

6. 9024281 - Method for dual energy implantation for ultra-shallow junction formation of MOS devices (2015-05-05),

7. 8901675 - CMOS devices and fabrication method (2014-12-02),

8. 8551831 - Silicon germanium and polysilicon gate structure for strained silicon transistors (2013-10-08),

9. 8466050 - Method for dual energy implantation for ultra-shallow junction formation of MOS devices (2013-06-18),

10. 8106423 - Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors (2012-01-31),

11. 7709336 - Metal hard mask method and structure for strained silicon MOS transistors (2010-05-04),

12. 7591659 - Method and structure for second spacer formation for strained silicon MOS transistors (2009-09-22),

13. 7557000 - Etching method and structure using a hard mask for strained silicon MOS transistors (2009-07-07),

14. 7425488 - Method and structure using a pure silicon dioxide hardmask for gate patterning for strained silicon MOS transistors (2008-09-16),

Title: The Innovative Mind of Hanming Wu

Introduction

Hanming Wu, an accomplished inventor based in Shanghai, China, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 14 patents, Wu's inventive spirit continues to drive advancements in this dynamic industry.

Latest Patents

Among his latest innovations is the "TSV interconnect structure and manufacturing method thereof." This invention presents a method for forming a through-substrate-via (TSV) structure. It involves creating a via hole within a substrate, depositing a conductive material inside the hole, and forming an annular groove surrounding it. The method further includes the deposition of a dielectric material in the groove, resulting in an air gap within its interior.

Another groundbreaking patent by Wu is a semiconductor device which incorporates multiple doped regions and gate members. This innovative device is designed to enhance functionality with its intricate layering of doped regions, dielectric layers, and gate components, thereby improving overall efficiency in electronic devices.

Career Highlights

Hanming Wu has had a prolific career, marked by his tenure at renowned organizations. He has worked with Semiconductor Manufacturing International (Shanghai) Corporation and Semiconductor Manufacturing International (Beijing) Corporation. His experience in these companies has undoubtedly influenced his innovative approaches and contributed to the development of his patented technologies.

Collaborations

Throughout his career, Wu has collaborated with notable professionals, including John Chen and Xian Jay Ning. These partnerships have fostered a collaborative environment that encourages the exchange of ideas, ultimately leading to the creation of impactful inventions.

Conclusion

In summary, Hanming Wu exemplifies the essence of innovation within the semiconductor industry. With a substantial number of patents under his name and a proven track record of collaboration, Wu's contributions are sure to leave a lasting impact on technology. As he continues to push the boundaries of what's possible, his work stands as a testament to the power of creativity and perseverance in the field of invention.

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