The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Jan. 05, 2016
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Wenbo Wang, Shanghai, CN;
Hanming Wu, Shanghai, CN;
Abstract
A semiconductor device may include the following elements: a first doped region; a second doped region, which contacts the first doped region; a third doped region, which contacts the first doped region; a first dielectric layer, which contacts the above-mentioned doped regions; a first gate member, which is conductive and comprises a first gate portion, a second gate portion, and a third gate portion, wherein the first gate portion contacts the first dielectric layer, wherein the second gate portion is positioned between the first gate portion and the third gate portion, and wherein a width of the second portion is unequal to a width of the third gate portion; a doped portion, which is positioned between the third gate portion and the third doped region; a second gate member; and a second dielectric layer, which is positioned between the third gate portion and the second gate member.