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For the Inventor, By the Inventor

Hsinchu, Taiwan

Han-Ting Lin

This inventor holds 25 USPTO granted patents and 10 published patent applications, primarily in Magnetic Memory Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2020-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Han-Ting Lin. Retrieved from https://idiyas.com/inventor/han-ting-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 96.0

Average Co-Inventor Count = 7.4

ph-index = 3

Forward Citations = 19(Granted Patents)


Company Filing History:

goldMedal25 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2020-2026

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Areas of Expertise:
Magnetic Tunnel Junction
Memory Device
MRAM
Semiconductor Structure
Etching Processes
Integrated Circuit
Gradient Protection Layer
Fabrication Method
Magneto-Resistive
Memory Cell
Stop Layer
Manufacturing Method
25 patents (USPTO):Explore Patents
1. 12648362 - Metal etching stop layer in magnetic tunnel junction memory cells (2026-06-02),
2. 12532666 - Method for manufacturing a memory device using multiple etching processes (2026-01-20),
3. 12520500 - Memory device and method for forming thereof (2026-01-06),
4. 12317751 - Integrated circuit (2025-05-27),
5. 12262642 - Method of fabricating magneto-resistive random access memory (MRAM) (2025-03-25),
6. 12219879 - Gradient protection layer in MTJ manufacturing (2025-02-04),
7. 12075707 - Semiconductor structure and method for forming the same (2024-08-27),
8. 12048250 - Method of fabricating magneto-resistive random access memory (MRAM) (2024-07-23),
9. 11968908 - Magnetic tunnel junction device (2024-04-23),
10. 11944017 - Semiconductor structure and manufacturing method of the same (2024-03-26),
11. 11856865 - Gradient protection layer in MTJ manufacturing (2023-12-26),
12. 11849644 - Method of fabricating magneto-resistive random access memory (MRAM) (2023-12-19),
13. 11800812 - Integrated circuit (2023-10-24),
14. 11770977 - Semiconductor structure and method for forming the same (2023-09-26),
15. 11683991 - Semiconductor structure and manufacturing method of the same (2023-06-20),

Title: Han-Ting Lin: Pioneering Taiwanese Inventor

Introduction: Han-Ting Lin is a distinguished inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Han-Ting Lin holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Han-Ting Lin has worked with leading tech companies in Taiwan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Han-Ting Lin has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge-sharing.

Conclusion: Han-Ting Lin's passion for innovation, coupled with his technical expertise, has solidified his reputation as a trailblazer in the world of technology, with his work continuing to inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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