The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2026
Filed:
Feb. 15, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chang-Lin Yang, Taoyuan, TW;
Sheng-Yuan Chang, Hsinchu, TW;
Chung-Te Lin, Tainan, TW;
Han-Ting Lin, Hsinchu, TW;
Chien-Hua Huang, Toufen Township, Miaoli County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a memory device includes forming a first metal layer over a substrate, forming a magnetic tunnel junction (MTJ) layer stack over the first metal layer, forming a second metal layer over the MTJ layer stack, forming a hard mask layer over the second metal layer, performing a first etching process on the MTJ layer stack to form an MTJ structure and a redeposited layer on a sidewall of the MTJ structure, performing a second etching process to remove the redeposited layer, and performing a third etching process on the sidewall of the MTJ structure.