The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Jul. 25, 2023
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Jiann-Horng Lin, Hsinchu, TW;
Kun-Yi Li, Hsinchu, TW;
Han-Ting Lin, Hsinchu, TW;
Huan-Just Lin, Hsinchu, TW;
Chen-Jung Wang, Hsinchu, TW;
Sin-Yi Yang, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for fabricating magnetic tunnel junction (MTJ) pillars is provided. The method includes following operations. A MTJ stack of layers including a first magnetic layer, a tunnel barrier layer overlying the first magnetic layer, and a second magnetic layer overlying the tunnel barrier layer is provided. A first patterning step is carried out by using a reactive ion etching. In the first patterning step, the second magnetic layer and the tunnel barrier layer are etched to form one or more pillar structures and a protection layer is formed and covers sidewalls of the pillar structures.