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For the Inventor, By the Inventor

Zhubei, Taiwan

Han-Ti Hsiaw

USPTO Granted Patents = 20 

Average Co-Inventor Count = 3.7

ph-index = 4

Forward Citations = 29(Granted Patents)


Location History:

  • Daliao Township, Kaohsiung County, TW (2005)
  • Hsinchu County, TW (2015)
  • Zhubei, TW (2015 - 2024)

Company Filing History:

goldMedal20 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2005-2025

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20 patents (USPTO):
1. 12272556 - Method of manufacturing a semiconductor device with a work-function layer having a concentration of fluorine (2025-04-08),
2. 12125876 - Semiconductor device and method (2024-10-22),
3. 12051614 - Isolation regions including two layers and method forming same (2024-07-30),
4. 11380549 - Semiconductor device with a work function layer having a concentration of fluorine (2022-07-05),
5. 11031280 - Isolation regions including two layers and method forming same (2021-06-08),
6. 10978341 - Contact openings and methods forming same (2021-04-13),
7. 10727066 - Semiconductor device and methods of manufacture (2020-07-28),
8. 10510593 - Contact openings and methods forming same (2019-12-17),
9. 10504734 - Semiconductor device and methods of manufacture (2019-12-10),
10. 10269569 - Semiconductor device and methods of manufacture (2019-04-23),
11. 9960074 - Integrated bi-layer STI deposition (2018-05-01),
12. 9881834 - Contact openings and methods forming same (2018-01-30),
13. 9837267 - Optical filtering for integrated dielectrics UV curing processes (2017-12-05),
14. 9728402 - Flowable films and methods of forming flowable films (2017-08-08),
15. 9379061 - High density dielectric etch-stop layer (2016-06-28),

Title: The Innovations of Han-Ti Hsiaw in Semiconductor Technology

Introduction

Han-Ti Hsiaw, based in Zhubei, Taiwan, is a notable inventor with an impressive portfolio of 20 patents. His work primarily focuses on advancements in semiconductor devices, contributing significantly to the landscape of modern technology.

Latest Patents

Among his latest patents is a groundbreaking method of manufacturing a semiconductor device with a work-function layer that contains a specific concentration of fluorine. This innovative method involves forming a metal layer over a substrate through a fluorine-free deposition process, followed by the creation of a nucleation layer using a fluorine-inclusive process, and ultimately filling an opening to establish a gate stack. Additionally, Han-Ti has developed expertise in FinFET structures, detailing methods for their formation. This patent outlines the creation of a fin on a substrate with an isolation region on either side, enhancing the efficiency and functionality of semiconductor devices.

Career Highlights

Currently, Han-Ti works at Taiwan Semiconductor Manufacturing Company Ltd., where he leverages his extensive knowledge and innovative skills to push the boundaries of semiconductor technology. His commitment to excellence and technological advancement is evident in his numerous patents.

Collaborations

Han-Ti has collaborated with esteemed colleagues such as Kuan-Cheng Wang and Wei-Fan Liao. Their combined efforts have led to significant advancements in semiconductor manufacturing techniques, reinforcing the importance of teamwork in innovation.

Conclusion

In summary, Han-Ti Hsiaw's contributions to the field of semiconductor technology reflect a dedication to innovation and a pursuit of excellence. His patents not only showcase his ingenuity but also pave the way for future advancements in the industry, making him a prominent figure in the world of inventions and patents.

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