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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12125876 B1

PDFFull Text
Date of Patent:
Oct. 22, 2024

Filed:

Nov. 18, 2016

Semiconductor device and method

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Kuan-Cheng Wang, Toufen Township, TW;

Han-Ti Hsiaw, Zhubei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Ori Nadav

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/0217 (2013.01); H01L 21/02321 (2013.01); H01L 21/31116 (2013.01); H01L 21/31155 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01); H01L 21/823878 (2013.01);
Abstract

FinFET structures and methods of forming the same are disclosed. In a method, a fin is formed on a substrate, an isolation region is formed on opposing sides of the fin. The isolation region is doped with carbon to form a doped region, and a portion of the isolation region is removed to expose a top portion of the fin, wherein the removed portion of the isolation region includes at least a portion of the doped region.

Find Patent Forward Citations

Wang, Kuan-Cheng. (2024). Semiconductor device and method (U.S. Patent No. 12125876). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12125876

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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