Taiwan Semiconductor Manufacturing Comp. Ltd.

Han-Ti Hsiaw

Kuan-Cheng Wang

Shin-Yeu Tsai

Wei-Fan Liao

Chung-Chiang Wu

Jung-Shiung Tsai

Keng-Chu Lin

Joung-Wei Liou

Yi-Wei Chiu

Chih-Hung Sun

Jr-Yu Chen

Wen-Cheng Wu

Tsung Han Hsu

Shwang-Ming Jeng

Chun-Hao Hsu

Shih-Ming Wang

Chia-I Shen

Fu-Chi Hsu

Shiauhan Wu

Mu-Chen Chen

Yi-Tse Huang

A semiconductor device and method of manufacture are provided. In an embodiment a metal layer is formed over a substrate using a fluorine-free deposition process, a nucleation layer is formed over the metal layer using a fluorine included deposition process, and a fill material is formed to fill an opening and form a gate stack.

Method of manufacturing a semiconductor device with a work-function layer having a concentration of fluorine

FinFET structures and methods of forming the same are disclosed. In a method, a fin is formed on a substrate, an isolation region is formed on opposing sides of the fin. The isolation region is doped with carbon to form a doped region, and a portion of the isolation region is removed to expose a top portion of the fin, wherein the removed portion of the isolation region includes at least a portion of the doped region.

Semiconductor device and method

A method includes etching a semiconductor substrate to form trenches extending into the semiconductor substrate, and depositing a first dielectric layer into the trenches. The first dielectric layer fills lower portions of the trenches. A Ultra-Violet (UV) treatment is performed on the first dielectric layer in an oxygen-containing process gas. The method further includes depositing a second dielectric layer into the trenches. The second dielectric layer fills upper portions of the trenches. A thermal treatment is performed on the second dielectric layer in an additional oxygen-containing process gas. After the thermal treatment, an anneal is performed on the first dielectric layer and the second dielectric layer.

Isolation regions including two layers and method forming same

Semiconductor device with a work function layer having a concentration of fluorine

A method includes performing an implantation on a portion of a first layer to form an implanted region, and removing un-implanted portions of the first layer. The implanted region remains after the un-implanted portions of the first layer are removed. An etching is then performed on a second layer underlying the first layer, wherein the implanted region is used as a portion of a first etching mask in the etching. The implanted region is removed. A metal mask is etched using the second layer to form a patterned mask. An inter-layer dielectric is then etched to form a contact opening, wherein the patterned mask is used as a second etching mask.

Contact openings and methods forming same

Semiconductor device and methods of manufacture

Integrated bi-layer STI deposition

A method of forming a semiconductor device includes forming a dielectric layer over a substrate, and curing the dielectric layer with a first curing process. The first curing process includes providing a first UV light source, filtering the first UV light source with a first filter, the first filter permitting a first electromagnetic radiation within a first pre-determined spectrum to pass through and blocking electromagnetic radiation outside the first pre-determined spectrum, and curing the dielectric layer with the first electromagnetic radiation of the first UV light source.

Optical filtering for integrated dielectrics UV curing processes

An embodiment is a method including depositing a first flowable film over a substrate in a processing region, the first flowable film comprising silicon and nitrogen, curing the first flowable film in a first step at a first temperature with a first process gas and ultra-violet light, the first process gas including oxygen, curing the first flowable film in a second step at a second temperature with a second process gas and ultra-violet light, the second process gas being different than the first process gas, and annealing the cured first flowable film at a third temperature to convert the cured first flowable film into a silicon oxide film over the substrate.

Flowable films and methods of forming flowable films

Some embodiments of the present disclosure relate to an integrated circuit device. The integrated circuit device includes a semiconductor substrate, and an inter-level dielectric layer arranged over the semiconductor substrate. An etch-stop layer is arranged over the inter-level dielectric layer. The etch-stop layer comprises silicon oxide, silicon nitride, or silicon oxynitride, and has a density greater than or equal to 2.15 g/cm.

High density dielectric etch-stop layer

Growing community of inventors

Zhubei, Taiwan

Han-Ti Hsiaw