Yongin, South Korea

Han-Sin Lee

This inventor holds 6 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2000-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Han-Sin Lee. Retrieved from https://idiyas.com/inventor/han-sin-lee-stz8c3a5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 4

Forward Citations = 165(Granted Patents)


Location History:

  • Euywang, KR (2000)
  • Kyunggi-do, KR (2000)
  • Suwon, KR (2005)
  • Yongin-si, KR (2011 - 2012)

Company Filing History:


Years Active: 2000-2012

Loading Chart...
6 patents (USPTO):Explore Patents

Title: Han-Sin Lee: Innovator in Semiconductor Technology

Introduction

Han-Sin Lee is a prominent inventor based in Yongin, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advanced memory devices and multi-level semiconductor structures, showcasing his expertise and innovative spirit.

Latest Patents

One of Han-Sin Lee's latest patents is for a resistive random access memory device. This device includes a first electrode, a resistive oxidation structure, and a second electrode. The resistive oxidation structure consists of sets of oxidation layers stacked on the first electrode. Each set is composed of a first metal oxide layer and a second metal oxide layer, with the latter being thinner than the former. The first metal oxidation layer of the first set contacts the upper surface of the first electrode, while the second electrode is formed on the resistive oxidation structure. The resistance of the oxidation structure can be altered by an electric field.

Another notable patent is for a multi-level semiconductor device and its fabrication method. This device features a first transistor on a semiconductor substrate, which includes a first source/drain region. A semiconductor layer is placed on the substrate, with a second transistor positioned on this layer. The second transistor has a second source/drain region located in a specific portion of the semiconductor layer, and a contact pattern extends from the first source/drain region to another portion of the semiconductor layer, which has a higher impurity concentration than the second source/drain region.

Career Highlights

Han-Sin Lee is currently employed at Samsung Electronics Co., Ltd., a leading global technology company. His work at Samsung has allowed him to push the boundaries of semiconductor technology and contribute to the development of innovative memory solutions.

Collaborations

Throughout his career, Han-Sin Lee has collaborated with talented individuals such as Yu-gyun Shin and Moon-Han Park. These collaborations have fostered a creative environment that has led to groundbreaking advancements in their field.

Conclusion

Han-Sin Lee is a distinguished inventor whose work in semiconductor technology has resulted in several impactful patents. His contributions continue to shape the future of memory devices and semiconductor structures, solidifying his reputation as an innovator in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…