The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2005
Filed:
Feb. 01, 2001
Han-sin Lee, Suwon, KR;
Moon-han Park, Yongin-shi, KR;
Han-Sin Lee, Suwon, KR;
Moon-Han Park, Yongin-shi, KR;
Abstract
In a trench isolation method, an etching mask pattern for forming a trench is formed on a semiconductor substrate. The substrate is etched to form a trench. An insulating layer is formed to fill the trench, and then a material layer is formed on the insulating layer. In this case, the material layer is made of material formed at a high temperature to density the insulating layer. The material layer and the insulating layer are planarly etched and the etching mask pattern is removed, so that a trench isolation layer is completed. Accordingly, although a densification process is avoided, it is possible to form a device isolation layer having a favorable surface profile.