The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Sep. 25, 1998
Yu-Gyun Shin, Seoul, KR;
Han-Sin Lee, Kyunggi-do, KR;
Tai-su Park, Kyunggi-do, KR;
Moon-Han Park, Kyunggi-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method for forming a trench isolation in a semiconductor device is provided in which a first heat treatment process is conducted on a thermal oxide layer previously formed in a trench at temperature range from about 1000.degree. C. to 1200.degree. C. for about 1 to 8 hours so as to remove defects in a semiconductor substrate and oxygen impurities within the semiconductor substrate resulting from a step of forming the trench in the semiconductor substrate. As a result, a subsequent second heat treatment process for densifying a trench filling material such as a CVD oxide layer can be performed at lower temperature of about 1000.degree. C. to 1050.degree. C., as compared with the temperature of the first annealing of the thermal oxide layer, thereby reducing distortions of the semiconductor substrate and reducing current leakages.