The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Dec. 30, 2009
Hyun-jun Shim, Hwseong-si, KR;
Han-sin Lee, Yongin-si, KR;
In-gyu Baek, Seoul, KR;
Jinshi Zhao, Hwaseong-si, KR;
Eun-kyung Yim, Seoul, KR;
Hyun-Jun Shim, Hwseong-si, KR;
Han-Sin Lee, Yongin-si, KR;
In-Gyu Baek, Seoul, KR;
Jinshi Zhao, Hwaseong-si, KR;
Eun-Kyung Yim, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A resistive memory device includes a first electrode, a resistive oxidation structure and a second electrode. The resistive oxidation structure has sets of oxidation layers stacked on the first electrode. Each set is made up of a first metal oxide layer and a second metal oxide layer which is disposed on and is thinner than the first metal oxide layer. The first metal oxidation layer of the first one of the sets of oxidation layers contacts an upper surface of the first electrode. The second electrode is formed on the resistive oxidation structure. The resistance of the oxidation structure can be changed by an electric field.