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For the Inventor, By the Inventor

Beijing, China

Guozhong Xing

USPTO Granted Patents = 9 

Average Co-Inventor Count = 5.3

ph-index = 1


Company Filing History:

goldMedal9 out of 3,086 
 
Chinese Academy of Sciences
 patents

Years Active: 2023-2025

where 'Filed Patents' based on already Granted Patents

9 patents (USPTO):
1. 12477960 - Memristor, method of calculating hamming distance, and in-memory computing integration application (2025-11-18),
2. 12453292 - All-electrically-controlled spintronic neuron device, neuron circuit and neural network (2025-10-21),
3. 12431175 - Self-reference storage structure and in-memory computing circuit (2025-09-30),
4. 12387774 - Spintronic device, memory cell, memory array and read and write circuit (2025-08-12),
5. 12336188 - Two-dimensional material-based selector with stack unit, memory unit, array, and method of operating the same (2025-06-17),
6. 12293781 - Three-state spintronic device, memory cell, memory array and read-write circuit (2025-05-06),
7. 12160529 - Reconfigurable PUF device based on fully electric field-controlled domain wall motion (2024-12-03),
8. 12154609 - In-memory computing using SOT-MRAM (2024-11-26),
9. 11790968 - Spintronic device, SOT-MRAM storage cell, storage array and in-memory computing circuit (2023-10-17),

Title: Guozhong Xing: Innovator in Spintronic Technology

Introduction

Guozhong Xing is a prominent inventor based in Beijing, China. He has made significant contributions to the field of spintronics, a technology that exploits the intrinsic spin of electrons for advanced computing applications. With a total of eight patents to his name, Xing is recognized for his innovative approaches to neural devices and circuits.

Latest Patents

Among his latest patents is the all-electrically-controlled spintronic neuron device, which includes a bottom antiferromagnetic pinning layer and a synthetic antiferromagnetic layer. This device is designed to enhance the functionality of neuron circuits and neural networks. Another notable patent is the self-reference storage structure and in-memory computing circuit, which utilizes three transistors and two magnetic tunnel junctions to efficiently store binary information.

Career Highlights

Guozhong Xing is affiliated with the Chinese Academy of Sciences, where he conducts research and development in advanced electronic devices. His work focuses on creating innovative solutions that integrate spintronic technology with neural computing.

Collaborations

Xing collaborates with esteemed colleagues such as Ming Liu and Huai Lin, contributing to a dynamic research environment that fosters innovation and technological advancement.

Conclusion

Guozhong Xing's contributions to spintronic technology and neural devices position him as a leading inventor in his field. His patents reflect a commitment to advancing the capabilities of electronic systems, paving the way for future innovations.

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