The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
Dec. 30, 2020
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Guozhong Xing, Beijing, CN;
Huai Lin, Beijing, CN;
Feng Zhang, Beijing, CN;
Di Wang, Beijing, CN;
Long Liu, Beijing, CN;
Changqing Xie, Beijing, CN;
Ling Li, Beijing, CN;
Ming Liu, Beijing, CN;
Abstract
A multi-resistance-state spintronic device, including: a top electrode and a bottom electrode respectively connected to a read-write circuit; and a magnetic tunnel junction between two electrodes. The magnetic tunnel junction includes from top to bottom: a ferromagnetic reference layer, a barrier tunneling layer, a ferromagnetic free layer, and a spin-orbit coupling layer. Nucleation centers are provided at two ends of the ferromagnetic free layer to generate a magnetic domain wall; the spin-orbit coupling layer is connected to the bottom electrode, and when a write pulse is applied, an electron spin current is generated and drives the magnetic domain wall through a spin-orbit torque to move; a plurality of local magnetic domain wall pinning centers are provided at an interface between the spin-orbit coupling layer and the ferromagnetic free layer to enhance a strength of a DM interaction constant between interfaces.