The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Aug. 20, 2020
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Guozhong Xing, Beijing, CN;
Huai Lin, Beijing, CN;
Yu Liu, Beijing, CN;
Peiwen Zhang, Beijing, CN;
Changqing Xie, Beijing, CN;
Ling Li, Beijing, CN;
Ming Liu, Beijing, CN;
Abstract
An SOT-driven field-free switching MRAM and an array thereof. From top to bottom, the SOT-MRAM sequentially includes: a selector () configured to turn on or turn off the SOT-MRAM under an action of an external voltage; a magnetic tunnel junction (), including a ferromagnetic reference layer, a tunneling layer and a ferromagnetic free layer arranged sequentially from top to bottom; and a spin-orbit coupling layer () made of one or more selected from heavy metal, doped heavy metal, heavy metal alloy, metal oxide, dual heavy metal layers, semiconductor material, two-dimensional semi-metal material and anti-ferromagnetic material. The spin-orbit coupling layer is configured to generate an in-plane effective field in the ferromagnetic free layer by using the interlayer exchange coupling effect and generate spin-orbit torques by using the spin Hall effect, so as to perform a deterministic data storage in the magnetic tunnel junction ().