Beijing, China

Peiwen Zhang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 10.9

ph-index = 1


Company Filing History:


Years Active: 2016-2025

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2 patents (USPTO):

Title: **Innovative Contributions of Peiwen Zhang in Spintronics and Nanotechnology**

Introduction

Peiwen Zhang is a distinguished inventor based in Beijing, China, recognized for his contributions to the fields of spintronics and nanotechnology. With a remarkable portfolio comprising two patents, Zhang has made significant strides in developing advanced devices that could shape the future of memory storage technology.

Latest Patents

Peiwen Zhang's latest innovations include a three-state spintronic device, memory cell, memory array, and read-write circuit. This groundbreaking device integrates a bottom electrode, a magnetic tunnel junction, and a top electrode. The magnetic tunnel junction features a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, and strategically positioned magnetic domain wall pinning centers. Zhang's invention allows for the modulation of antisymmetric exchange interactions and employs a current pulse to generate a spin current that is injected into the ferromagnetic free layer. This innovation ensures effective movement of domain walls through all-electrical control, pushing the boundaries of what is achievable in spintronic devices.

Additionally, Zhang has developed a method for manufacturing an ordered nanowire array of NiO doped with Pt in situ. This method includes several meticulous steps, such as growing a Ni layer on an insulated substrate and utilizing electron beam etching for patterning. The process culminates with an oxidation step that enhances the sensitivity and reliability of the resulting sensors, particularly for gases like CO and H₂. This practical and efficient method showcases Zhang's commitment to advancing material sciences.

Career Highlights

Peiwen Zhang is affiliated with the Chinese Academy of Sciences, a leading institution known for its cutting-edge research and innovation. His career has been marked by a dedication to pushing the envelope in nanotechnology and memory systems design. His patent contributions not only illustrate his ingenuity but also underline his role in the continuous evolution of electronic materials and devices.

Collaborations

Throughout his career, Zhang has collaborated with notable colleagues, including Changqing Xie and Ming Liu. These partnerships have fostered an environment of shared knowledge and expertise, amplifying the impact of their collective research efforts.

Conclusion

Peiwen Zhang's innovations in the realms of spintronics and nanotechnology mark him as a key figure in contemporary research. As he continues to develop and refine advanced technologies, his contributions are sure to leave an indelible mark on the future of memory devices and sensor technologies. The work conducted at the Chinese Academy of Sciences is a testament to his commitment to innovation and excellence in his field.

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