The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Jan. 17, 2013
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Dongmei Li, Beijing, CN;
Xin Chen, Beijing, CN;
Shengfa Liang, Beijing, CN;
Jiebin Niu, Beijing, CN;
Peiwen Zhang, Beijing, CN;
Yu Liu, Beijing, CN;
Xiaojing Li, Beijing, CN;
Shuang Zhan, Beijing, CN;
Hao Zhang, Beijing, CN;
Qing Luo, Beijing, CN;
Changqing Xie, Beijing, CN;
Ming Liu, Beijing, CN;
Abstract
The present disclosure provides a method for manufacturing ordered nanowires array of NiO doped with Pt in situ, comprising: growing a Ni layer on a high-temperature resistant and insulated substrate; applying a photoresist on the Ni layer, pattering a pattern region of the ordered nanowires array by applying electron beam etching on the photoresist, growing Ni on the pattern region of the ordered nanowires array, peeling off the photoresist by acetone and etching the surface of the Ni layer by ion beam etching so as to etch off the Ni layer grown on the surface of the substrate and to leave the Ni on the pattern region of the ordered nanowires array to form the ordered Ni nanowires array; dipping the ordered Ni nanowires array into a solution of HPtClso as to displace Pt on the Ni nanowires array by a displacement reaction; and oxidizing the Ni nanowires array attached with Pt in an oxidation oven to obtain the ordered nanowires array of NiO doped with Pt. The present invention is simple and practical and the sensitivity and reliability of the doped sensor on the gas of CO and Hare greatly improved.