The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2025

Filed:

May. 17, 2021
Applicant:

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Guozhong Xing, Beijing, CN;

Di Wang, Beijing, CN;

Ming Liu, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); G06N 3/063 (2023.01); H10N 52/00 (2023.01); H10N 52/85 (2023.01); H10N 59/00 (2023.01);
U.S. Cl.
CPC ...
H10N 52/101 (2023.02); G06N 3/063 (2013.01); H10N 52/85 (2023.02); H10N 59/00 (2023.02);
Abstract

Provided is an all-electrically-controlled spintronic neuron device, a neuron circuit and a neural network. The neuron device includes: a bottom antiferromagnetic pinning layer; a synthetic antiferromagnetic layer formed on the bottom antiferromagnetic pinning layer; a potential barrier layer formed on the ferromagnetic free layer, wherein a region of the ferromagnetic free layer directly opposite to the potential barrier layer forms a threshold region; a ferromagnetic reference layer formed on the potential barrier layer; wherein the potential barrier layer, the ferromagnetic reference layer and the ferromagnetic free layer form a magnetic tunnel junction; a first antiferromagnetic pinning layer and a second antiferromagnetic pinning layer formed on an exposed region of the ferromagnetic free layer except the region directly opposite the potential barrier layer, and located on two sides of the potential barrier layer; and a first electrode formed on the ferromagnetic reference layer.


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