Company Filing History:

7 out of 13,684

Applied Materials, Inc.

patents

4 out of 832,680

Other

patents

Years Active: 2002-2010

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7838434 - Method of plasma etching of high-K dielectric materials (2010-11-23),

2. 7368394 - Etch methods to form anisotropic features for high aspect ratio applications (2008-05-06),

3. 7217665 - Method of plasma etching high-K dielectric materials with high selectivity to underlying layers (2007-05-15),

4. 7094704 - Method of plasma etching of high-K dielectric materials (2006-08-22),

5. 6893893 - Method of preventing short circuits in magnetic film stacks (2005-05-17),

6. 6821907 - Etching methods for a magnetic memory cell stack (2004-11-23),

7. 6806095 - Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers (2004-10-19),

8. 6767824 - Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask (2004-07-27),

9. 6730561 - Method of forming a cup capacitor (2004-05-04),

10. 6692903 - Substrate cleaning apparatus and method (2004-02-17),

11. 6368517 - Method for preventing corrosion of a dielectric material (2002-04-09),

Title: Innovations of Guangxiang Jin

Introduction

Guangxiang Jin is a prominent inventor based in San Jose, CA, known for his significant contributions to the field of semiconductor technology. He holds a total of 11 patents, showcasing his expertise and innovative spirit in developing advanced etching methods.

Latest Patents

Among his latest patents is a method of plasma etching of high-K dielectric materials. This method utilizes a halogen gas, a reducing gas, and an etch rate control gas chemistry to effectively etch high dielectric constant materials. Another notable patent involves etch methods to form anisotropic features for high aspect ratio applications. This invention provides methods for forming anisotropic features, facilitating profile and dimension control through a sidewall passivation management scheme. The techniques described allow for the incremental etching of features with high aspect ratios, ensuring desired depth and vertical profiles without generating defects or overetching underlying layers.

Career Highlights

Guangxiang Jin has worked with leading companies in the semiconductor industry, including Applied Materials, Inc. His experience in these organizations has contributed to his development of innovative technologies that enhance manufacturing processes.

Collaborations

Throughout his career, Guangxiang has collaborated with notable professionals in the field, including Padmapani Nallan and Ajay Kumar. These collaborations have further enriched his work and contributed to advancements in semiconductor technology.

Conclusion

Guangxiang Jin's innovative contributions to plasma etching and semiconductor technology have established him as a key figure in the industry. His patents reflect a commitment to advancing technology and improving manufacturing processes.

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