The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2007
Filed:
Nov. 20, 2002
Applicants:
Padmapani C. Nallan, San Jose, CA (US);
Guangxiang Jin, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Inventors:
Padmapani C. Nallan, San Jose, CA (US);
Guangxiang Jin, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas.
Nallan, Padmapani. (2007). Method of plasma etching high-k dielectric materials with high selectivity to underlying layers (U.S. Patent No. 7217665). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7217665
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile