The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Jan. 06, 2003
Applicant:
Inventors:
Padmapani C. Nallan, San Jose, CA (US);
Ajay Kumar, Sunnyvale, CA (US);
Guangxiang Jin, San Jose, CA (US);
Wei Liu, San Jose, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/128 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/128 ; H01L 2/13205 ;
Abstract
A method of fabricating a gate structure of a field effect transistor comprising processes of forming an &agr;-carbon mask and plasma etching a gate electrode and a gate dielectric using the &agr;-carbon mask. In one embodiment, the gate dielectric comprises hafnium dioxide.