The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2008
Filed:
Feb. 27, 2006
Meihua Shen, Fremont, CA (US);
Uwe Leucke, Dresden, DE;
Guangxiang Jin, San Jose, CA (US);
Xikun Wang, Sunnyvale, CA (US);
Wei Liu, San Jose, CA (US);
Scott Williams, Belmont, CA (US);
Meihua Shen, Fremont, CA (US);
Uwe Leucke, Dresden, DE;
Guangxiang Jin, San Jose, CA (US);
Xikun Wang, Sunnyvale, CA (US);
Wei Liu, San Jose, CA (US);
Scott Williams, Belmont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming anisotropic features for high aspect ratio application in etch process are provided in the present invention. The methods described herein advantageously facilitates profile and dimension control of features with high aspect ratios through a sidewall passivation management scheme. In one embodiment, sidewall passivations are managed by selectively forming an oxidation passivation layer on the sidewall and/or bottom of etched layers. In another embodiment, sidewall passivation is managed by periodically clearing the overburden redeposition layer to preserve an even and uniform passivation layer thereon. The even and uniform passivation allows the features with high aspect ratios to be incrementally etched in a manner that pertains a desired depth and vertical profile of critical dimension in both high and low feature density regions on the substrate without generating defects and/or overetching the underneath layers.