Gregory C DeSalvo

Title: Innovations of Gregory C DeSalvo

Introduction

Gregory C DeSalvo is a notable inventor based in Beavercreek, OH (US). He holds a total of 11 patents, showcasing his significant contributions to the field of semiconductor technology. His work primarily focuses on enhancing the performance and fabrication methods of field-effect transistors.

Latest Patents

One of his latest patents is the "Complementary heterostructure integrated single metal transistor apparatus." This invention discloses an enhancement mode periodic table group III-IV semiconductor field-effect transistor complementary pair device. The device features single metallization for ohmic and Schottky barrier contacts, along with a permanent non-photosensitive passivation layer. This layer has also been utilized for masking purposes during the device's fabrication. The gate elements are designed with small dimensions and shaped cross-sections to provide desirable microwave spectrum electrical characteristics. The complementary pair is fabricated from undoped semiconductor materials in a layered wafer structure, selectively doped by ion implantation to achieve both p-channel and n-channel transistors. The semiconductor materials may include two, one, or zero buffer layers in their structure. This invention boasts reduced fabrication costs, increased dimensional accuracy, and state-of-the-art electrical performance.

Another significant patent is the "Complementary heterostructure integrated single metal transistor fabrication method." This method describes the fabrication of a periodic table group III-IV metal semiconductor metal field-effect enhancement mode complementary transistor pair device, typically made of gallium arsenide materials. The fabrication process employs initially undoped semiconductor materials and single metallization for ohmic and Schottky barrier contacts. It also includes an inorganic dielectric material layer that provides non-photosensitive masking at multiple points during the fabrication sequence. The invention utilizes selective ion implantations and a combined optical and electron beam lithographic process, particularly in small dimension gate areas. These attributes contribute to a complementary pair with reduced fabrication costs, low electrical energy operating requirements, increased dimensional accuracy, and current state-of-the-art electrical performance.

Career Highlights

Throughout his career, Gregory C DeSalvo has worked with various organizations, including the United States of America as represented by the Secretary of the Air Force. His innovative work has significantly impacted the semiconductor industry, particularly in the development of advanced transistor technologies.

Collaborations

Gregory has collaborated with notable individuals in his field, including Kenichi Nakano and Christopher A Bozada. Their