The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 1998

Filed:

Jul. 22, 1996
Applicant:
Inventors:

Kenichi Nakano, Beavercreek, OH (US);

Christopher A Bozada, Dayton, OH (US);

Tony K Quach, Kettering, OH (US);

Gregory C DeSalvo, Beavercreek, OH (US);

G David Via, Dayton, OH (US);

Ross W Dettmer, Dayton, OH (US);

Charles K Havasy, Kettering, OH (US);

James S Sewell, Kettering, OH (US);

John L Ebel, Beavercreek, OH (US);

James K Gillespie, Cedarville, OH (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257284 ; 257192 ;
Abstract

A periodic table group III-IV metal semiconductor metal field-effect transistor device is described. The disclosed device includes single metalization for ohmic and Schottky barrier contacts, an elective permanent etch stop layer, a non-alloyed ohmic contact semiconductor layer and a permanent non photosensitive secondary mask element. The invention may be achieved with one of an all optical lithographic process and a combined optical and electron beam lithographic process The disclosed field-effect transistor device is of reduced fabrication cost, increased dimensional accuracy and state of the art electrical performance.


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