The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Jul. 22, 1996
Kenichi Nakano, Beavercreek, OH (US);
Christopher A Bozada, Dayton, OH (US);
Tony K Quach, Kettering, OH (US);
Gregory C DeSalvo, Beavercreek, OH (US);
G David Via, Dayton, OH (US);
Ross W Dettmer, Dayton, OH (US);
Charles K Havasy, Kettering, OH (US);
James S Sewell, Kettering, OH (US);
John L Ebel, Beavercreek, OH (US);
James K Gillespie, Cedarville, OH (US);
Abstract
A method for fabricating a periodic table group III-IV HEMT/pHEMT field-effect transistor device. The disclosed fabrication arrangement uses a single metalization for ohmic and Schottky barrier contacts, employs selective etching with a permanent etch stop layer, employs a non-alloyed ohmic contact semiconductor layer and includes a permanent non-photosensitive secondary mask element. The invention includes provisions for both an all optical lithographic process and a combined optical and electron beam lithographic process These concepts are combined to provide a field-effect transistor device of reduced fabrication cost, increased dimensional accuracy and state of the art electrical performance.