This inventor holds 5 USPTO granted patents and 7 published patent applications and 1 EPO patent. Top assignees: Infineon Technologies Austria Ag, Infineon Technologies Ag, Infineon Technologies Americas Corp.. Active years: 2026.
Company Filing History:
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Years Active: 2026
Title: Gerhard Thomas Nöbauer: Innovator in Power FET Technology
Introduction
Gerhard Thomas Nöbauer is an inventor based in Villach, Austria. He is currently employed at Infineon Technologies Austria AG. Although he has not yet been granted any patents, his work focuses on advancements in power field effect transistor (FET) technology.
Latest Patent Applications
Gerhard has been involved in several notable patent applications. One of his latest applications is titled "Current Sensing Implementation for Common-Drain, Back-to-Back Power Switches in Vertical FET Technology." This application describes techniques for load current sensing in common-drain power FET switches. In this embodiment, a power FET device includes back-to-back power FETs connected to a common drain node. It also features a first replica FET that provides a sense current representative of the load current flowing through the device. Additionally, a second replica FET is included to provide a sense voltage representative of the voltage at the common drain node. A current sense circuit is configured to utilize the sense voltage from the second replica FET to draw the sense current through the first replica FET.
Another significant application is "Temperature Sensing in Common-Drain, Back-to-Back Power Switches Developed in Vertical FET Technology." This application outlines techniques for temperature sensing in power FET switches. The power FET device includes back-to-back power FETs connected in series between two power terminals and linked to a common drain node. It also incorporates a temperature sense diode with a cathode connected to the common drain node. A temperature sense circuit is designed to determine the temperature of the power FETs based on the voltage drop across the temperature sense diode.
Conclusion
Gerhard Thomas Nöbauer is making strides in the field of power FET technology through his innovative patent applications. His work has the potential to significantly impact the efficiency and functionality of power electronic devices.