The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Jun. 05, 2023
Infineon Technologies Austria Ag, Villach, AT;
Timothy Henson, Mount Shasta, CA (US);
Harsh Naik, El Segundo, CA (US);
Oliver Blank, Villach, AT;
Gerhard Thomas Nöbauer, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device includes: a plurality of transistor cells formed in a semiconductor body. The plurality of transistor cells includes: a plurality of stripe-shape gate trenches formed in a first main surface of the semiconductor body; and a plurality of field plate trenches separate from the stripe-shape gate trenches. At least one field plate trench is laterally interposed between each pair of neighboring stripe-shape gate trenches. Each stripe-shape gate trench includes a gate electrode, a gate dielectric between the gate electrode and a sidewall of the stripe-shape gate trench, and an oxide between the gate electrode and a bottom of the stripe-shape gate trench, the oxide having a vertical thickness that is greater than eight times a lateral thickness of the gate dielectric and/or greater than a vertical thickness of the gate electrode. A method of producing the semiconductor device is also described.