Geng-Yen Lee

Title: Geng-Yen Lee: Innovator in Semiconductor Technology

Introduction

Geng-Yen Lee is a prominent inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on innovative methods and devices that enhance the performance and efficiency of semiconductor applications.

Latest Patents

One of Geng-Yen Lee's latest patents is for a semiconductor device and method of fabricating the same. This patent describes a semiconductor device that includes a channel layer, an AlInN layer on the channel layer with a specific thickness, and a reverse polarization layer on the AlInN layer. The thickness of these layers is carefully defined to optimize performance. Another notable patent is for a diode device and method for manufacturing the same. This invention features a III-N compound layer with a channel region, along with a cathode region and two anode regions, designed to improve the efficiency of diode devices.

Career Highlights

Geng-Yen Lee has worked with esteemed organizations such as National Central University and Delta Electronics, Inc. His experience in these institutions has allowed him to collaborate on various projects that push the boundaries of semiconductor technology.

Collaborations

Throughout his career, Geng-Yen Lee has collaborated with notable colleagues, including Jen-Inn Chyi and Hsueh-Hsing Liu. These partnerships have contributed to the advancement of his research and innovations in the semiconductor field.

Conclusion

Geng-Yen Lee is a distinguished inventor whose work in semiconductor technology has led to several impactful patents. His contributions continue to shape the future of this critical industry.