The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Aug. 08, 2013
National Central University, Jhongli, Taoyuan County, TW;
Delta Electronics, Inc., Taoyuan Hsien, TW;
Jen-Inn Chyi, Jhongli, TW;
Hui-Ling Lin, Jhongli, TW;
Geng-Yen Lee, Jhongli, TW;
Shih-Peng Chen, Taoyuan Hsien, TW;
NATIONAL CENTRAL UNIVERSITY, Taoyuan, TW;
DELTA ELECTRONICS, INC., Taoyuan, TW;
Abstract
A field effect transistor device is provided by the invention. The field effect transistor device includes: a substrate; a buffer layer, a channel layer, and a first barrier layer sequentially disposed on the substrate; a two-dimensional electron gas controlling layer disposed on the first barrier layer; a second barrier layer disposed on the two-dimensional electron gas controlling layer, wherein the second barrier layer has a recess passing through the second barrier layer; and a gate electrode filled into the recess and separated from the second barrier layer and the two-dimensional electron gas controlling layer by an insulating layer.