The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 07, 2019
Filed:
May. 12, 2016
Delta Electronics, Inc., Taoyuan, TW;
National Central University, Taoyuan, TW;
DELTA ELECTRONICS, INC., Taoyuan, TW;
NATIONAL CENTRAL UNIVERSITY, Taoyuan, TW;
Abstract
In one aspect of the present disclosure, a semiconductor device includes a channel layer, an AlInN layer on the channel layer with a thickness of t1, and a reverse polarization layer on the AlInN layer with a thickness of t2. The thickness is 0.5×t1≤t2≤3×t1. In another aspect of the present disclosure, a method of manufacturing a semiconductor device is provided. The method including: forming a channel layer on a substrate; forming an AlInN layer on the channel layer with a thickness of t1; and forming a reverse polarization layer on the AlInN layer with a thickness of t2. The thickness is 0.5×t1≤t2≤3×t1.