The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2017
Filed:
Feb. 10, 2016
National Central University, Taoyuan, TW;
Delta Electronics, Inc., Taoyuan, TW;
Jen-Inn Chyi, Taoyuan, TW;
Bo-Shiang Wang, Taoyuan, TW;
Chun-Chieh Yang, Taoyuan, TW;
Geng-Yen Lee, Taoyuan, TW;
National Central University, Jhongli, Taoyuan County, TW;
Delta Electronics, Inc., Taoyuan, TW;
Abstract
A diode device including a III-N compound layer is provided. The III-N compound layer has a channel region therein. A cathode region is located on the III-N compound layer. A first anode region is located on the III-N compound layer and extends into the III-N compound layer. The bottom of the first anode region is under the channel region. A second anode region is located on the III-N compound layer between the cathode region and the first anode region, and extends into the III-N compound material layer. The second anode region includes a high-energy barrier region. The high-energy barrier region adjoins a sidewall of the first anode region. A method for manufacturing a diode device is also provided.