Yokohama, Japan

Fumitoshi Ito

This inventor holds 17 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Non-Volatile Memory. Top assignees: Sandisk Corporation, Sandisk Technologies Inc., Kabushiki Kaisha Toshiba. Active years: 2008-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fumitoshi Ito. Retrieved from https://idiyas.com/inventor/fumitoshi-ito

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 17 

% Patents Active = 88.2


Average Co-Inventor Count = 1.5

ph-index = 9

Forward Citations = 317(Granted Patents)


Location History:

  • Yokohama, JP (2008 - 2015)
  • Yokkaichi, JP (2018)

Company Filing History:


Years Active: 2008-2018

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Areas of Expertise:
Three-Dimensional Memory
Memory Array
Resistance Change Memory
Non-Volatile Storage
Bit Line Current Modulation
Partitioned Soft Programming
Boosting Control Implant
Erase Verification
17 patents (USPTO):Explore Patents

Title: Fumitoshi Ito: Innovator in Three-Dimensional Memory Devices

Introduction

Fumitoshi Ito is a renowned inventor based in Yokohama, Japan, recognized for his significant contributions to the field of three-dimensional memory devices. With an impressive portfolio of 17 patents, Ito has made notable advancements that enhance the efficiency and performance of memory technology.

Latest Patents

Among Ito's latest innovations are groundbreaking patents focused on offset backside contact via structures designed for three-dimensional memory devices. One patent addresses the issue of die cracking in these devices by incorporating offsets to backside contact via structures. This design includes laterally extending portions that run along a first horizontal direction and adjoining portions extending in a different horizontal direction. By maintaining the periodicity of memory stack structures, the distance between an outermost row of memory stack structures and the nearest backside contact via structure is strategically varied to optimize functionality.

Another notable patent introduces an innovative configuration for a three-dimensional memory device that encompasses multiple planes, each featuring an alternating stack of strings of memory structures and backside contact via structures. This design enables lateral separation of neighboring pairs of memory stack structures along a secondary horizontal direction, enhancing the overall architecture of the device.

Career Highlights

Fumitoshi Ito has had an exemplary career, with significant roles at well-known companies such as SanDisk Corporation and SanDisk Technologies Inc. His work has led to advancements that not only improve the reliability of memory devices but also contribute to the evolution of memory technology.

Collaborations

Throughout his career, Ito has collaborated with notable professionals in the field, including Shinji Sato and Cheng-Chung Chu. These collaborations have fostered an environment of innovation and excellence, leading to the development of patents that push the boundaries of what is possible in memory device technology.

Conclusion

Fumitoshi Ito is a pivotal figure in the realm of three-dimensional memory devices. His innovative patents and collaborative efforts have established him as a leading inventor, impacting the technology landscape significantly. As the industry continues to evolve, Ito’s contributions will undoubtedly remain central to advancements in memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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