The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Sep. 05, 2013
Applicants:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Sandisk Corporation, Sunnyvale, CA (US);

Inventors:

Takamasa Okawa, Yokkaichi, JP;

Fumitoshi Ito, Yokohama, JP;

Youichi Minemura, Yokkaichi, JP;

Takayuki Tsukamoto, Yokkaichi, JP;

Hiroshi Kanno, Yokkaichi, JP;

Assignees:

KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;

SanDisk Corporation, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 7/12 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0023 (2013.01); G11C 13/0002 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); G11C 7/12 (2013.01); G11C 2213/71 (2013.01); G11C 2213/72 (2013.01);
Abstract

According to one embodiment, a memory includes memory cells between first conductive lines and second conductive lines. A control circuit is configured to apply a first potential to a first end of a selected first conductive line connected to the selected memory cell among the first conductive lines and first ends of unselected second conductive lines not connected to the selected memory cell among the second conductive lines, apply a second potential larger than the first potential to a first end of a selected second conductive line connected to the selected memory cell among the second conductive lines, apply third potentials smaller than the second potential to first ends of unselected first conductive lines not connected to the selected memory cell among the first conductive lines respectively, and change values of the third potentials based on an address of the selected first conductive line.


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