The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

May. 29, 2014
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Man L. Mui, Santa Clara, CA (US);

Teruhiko Kamei, Yokohama, JP;

Yingda Dong, San Jose, CA (US);

Ken Oowada, Fujisawa, JP;

Yosuke Kato, Kamakura, JP;

Fumitoshi Ito, Yokohama, JP;

Seungpil Lee, San Ramon, CA (US);

Assignee:

Sandisk Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/28 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 11/5642 (2013.01); G11C 16/26 (2013.01); G11C 2211/5621 (2013.01);
Abstract

Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements, determines sensing parameters based at least in part on this information, pre-charges a charge storage device and, while maintaining the voltage level of the bit lines of these memory cells at a constant value, applies a reference signal to these non-volatile storage elements for a certain duration of time, afterwards determining whether, for the certain duration of time, the current conducted by these non-volatile storage elements exceeds a predetermined value.


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