Yokohama, Japan

Yosuke Kato


 

Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 50(Granted Patents)


Location History:

  • Kamakura, JP (2014 - 2015)
  • Kanagawa, JP (2015)
  • Yokohama, JP (2013 - 2022)

Company Filing History:


Years Active: 2013-2022

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8 patents (USPTO):Explore Patents

Title: Yosuke Kato: Innovator in Memory Technology

Introduction

Yosuke Kato is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of memory technology, holding a total of eight patents. His work focuses on improving read time performance and energy consumption in memory systems.

Latest Patents

One of Kato's latest patents is titled "Word line discharge skip for faster read time." This invention describes methods for enhancing read time performance when accessing multiple pages within a memory block. The technology involves dynamically skipping or accelerating unselected word line discharge cycles. A controller or control circuits can detect a read command for a second page before the discharge phase for the first page. In response, the controller skips the discharge cycle for unselected word lines and initiates the next page read after a partial discharge period.

Career Highlights

Yosuke Kato is currently employed at Sandisk Technologies Inc., where he continues to innovate in the field of memory technology. His expertise has led to advancements that significantly improve the efficiency of memory systems.

Collaborations

Throughout his career, Kato has collaborated with talented individuals such as Man Lung Mui and Seungpil Lee. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Yosuke Kato's contributions to memory technology through his innovative patents and

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