Yao, Japan

Fumihiko Jobe

This inventor holds 7 USPTO granted patents. Top assignees: Hosiden Corporation, Osaka Prefecture, Other. Active years: 2004-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fumihiko Jobe. Retrieved from https://idiyas.com/inventor/fumihiko-jobe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 28.6

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Osaka, JP (2005 - 2006)
  • Yao, JP (2004 - 2008)

Company Filing History:

goldMedal5 out of 793 
 
Hosiden Corporation
 patents
silverMedal5 out of 17 
 
Osaka Prefecture
 patents
bronzeMedal2 out of 834,570 
Other
 patents
where one patent can have more than one assignee

Years Active: 2004-2008

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7 patents (USPTO):Explore Patents

Title: Fumihiko Jobe: Innovator in Semiconductor Technology

Introduction

Fumihiko Jobe is a prominent inventor based in Yao, Japan, known for his significant contributions to semiconductor technology. With a total of seven patents to his name, Jobe has made remarkable advancements in the field of electronic-optical devices.

Latest Patents

One of Jobe's latest patents is the "Manufacturing method of monocrystalline gallium nitride localized substrate." This invention provides a monocrystalline gallium nitride localized substrate that is suitable for manufacturing electronic-optical united devices, where electronic and optical devices are mixedly mounted on the same silicon substrate. The method involves locally growing monocrystalline gallium nitride on a silicon substrate by forming silicon carbide on the silicon substrate. Additionally, silicon nitride is used as a mask in the formation of the monocrystalline gallium nitride.

Another notable patent is the "Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate." This manufacturing method involves placing a silicon-on-insulator (SOI) substrate with a surface silicon layer of a predetermined thickness and a buried insulator into a heating furnace. The temperature of the atmosphere within the heating furnace is increased while supplying a mixed gas of hydrogen and hydrocarbon gases, resulting in the metamorphosis of the surface silicon layer into a single crystal silicon carbide thin film.

Career Highlights

Throughout his career, Jobe has worked with notable companies, including Osaka Prefecture and Hosiden Corporation. His work has significantly impacted the development of semiconductor technologies, particularly in the integration of electronic and optical devices.

Collaborations

Jobe has collaborated with esteemed colleagues such as Katsutoshi Izumi and Yoshiaki Ohbayashi, contributing to various innovative projects in the semiconductor field.

Conclusion

Fumihiko Jobe's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence the development of advanced electronic-optical devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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