The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2008
Filed:
Feb. 14, 2005
Katsutoshi Izumi, Sakai, JP;
Motoi Nakao, Osaka, JP;
Yoshiaki Ohbayashi, Nara, JP;
Keiji Mine, Yao, JP;
Seisaku Hirai, Yao, JP;
Fumihiko Jobe, Yao, JP;
Tomoyuki Tanaka, Sakai, JP;
Katsutoshi Izumi, Sakai, JP;
Motoi Nakao, Osaka, JP;
Yoshiaki Ohbayashi, Nara, JP;
Keiji Mine, Yao, JP;
Seisaku Hirai, Yao, JP;
Fumihiko Jobe, Yao, JP;
Tomoyuki Tanaka, Sakai, JP;
Osaka Prefecture, Osaka-shi, JP;
Hosiden Corporation, Yao-shi, JP;
Abstract
There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate. An area in which monocrystalline gallium nitrideis grown is locally present on a silicon substrateby forming silicon carbideon the silicon substrateto locally form the monocrystalline gallium nitrideon the above-mentioned silicon carbide. Silicon nitrideis used as a mask in forming the above-mentioned monocrystalline gallium nitride