The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2004
Filed:
Jun. 03, 2002
Katsutoshi Izumi, Sakai, JP;
Motoi Nakao, Osaka, JP;
Yoshiaki Ohbayashi, Nara, JP;
Keiji Mine, Yao, JP;
Fumihiko Jobe, Yao, JP;
Other;
Abstract
To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber adapted to receive a SOI substrate for film-formation, a gas supply means for supplying various gases G to G necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber , a gas treatment means for treating argon gas as an inert gas G , propane gas as a hydrocarbon-based gas G , hydrogen gas as a carrier gas, and oxygen gas G supplied to the film-formation chamber , and a temperature control means for controlling the temperature of the film-formation chamber