The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 31, 2006
Filed:
Mar. 18, 2004
Katsutoshi Izumi, Sakai, JP;
Motoi Nakao, Osaka, JP;
Yoshiaki Ohbayashi, Nara, JP;
Keiji Mine, Yao, JP;
Seisaku Hirai, Yao, JP;
Fumihiko Jobe, Yao, JP;
Tomoyuki Tanaka, Sakai, JP;
Katsutoshi Izumi, Sakai, JP;
Motoi Nakao, Osaka, JP;
Yoshiaki Ohbayashi, Nara, JP;
Keiji Mine, Yao, JP;
Seisaku Hirai, Yao, JP;
Fumihiko Jobe, Yao, JP;
Tomoyuki Tanaka, Sakai, JP;
Osaka Prefecture, Osaka, JP;
Hosiden Corporation, Yao, JP;
Abstract
A manufacturing method for a buried insulating layer-type semiconductor silicon carbide substrate comprises the step of placing an SOI substratewhich has a surface silicon layerof a predetermined thickness and a buried insulatorin a heating furnaceand of increasing the temperature of the atmosphere within heating furnacewhile supplying a mixed gas (G+G) of a hydrogen gas Gand of a hydrocarbon gas Ginto heating furnacethereby, of metamorphosing surface silicon layerof SOI substrateinto a single crystal silicon carbide thin film